The RF1 near-field probe set consists of four passive near-field probes for measuring E-fields and magnetic fields from 30 MHz to 3 GHz on electronic assemblies during the development stage. The different probe heads of the RF1 set allow for measurements very close to the electronic assemblies, e.g. on single IC pins, conducting paths, components, and connectors, in order to localize interference sources. An electronic assembly´s field orientation and field distribution can be detected through specific use of the near-field probe. The near field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
Scope of delivery
|Frequency range||30 MHz ... 3 GHz|
|Connector||SMB, male, jack|
Scope of delivery details
The RF-K 7-4 near-field probe detects semi-circular magnetic field lines entering the probe head reversely. Such magnetic field lines occur at traces, rodlike constructional components, cable connectors, and along edges of areal constructional components. The probe functions like a coupling clamp.
The RF-U 2.5-2 near-field probe is designed for the selective measurements of RF currents in conducting paths, component connectors, SMD components, and IC-pins. The probe head has a magnetically active gap with an approx. width of 0.5 mm. To use, the head should be positioned directly onto the meas…
The RF-R 3-2 near-field probe is used for the high-resolution measurement of RF magnetic fields directly on an assembly e.g. in range around pins and IC cases, conducting paths, decoupling capacitor and EMC components.
The electrode underneath the RF-E 10 probe has a width of approx. 0.2 mm, which can locate even the smallest E-field sources, e.g. conducting paths with a width of 0.1 mm or, single IC pins at high pin ICs.