• Contact us
  • Career
  • Terms and Conditions
  • Payment form
  • DE
  • EN
  • CN

Black cat logo Langer EMV-Technik

  • 关于我们
    • 公司
      • Career
      • Terms and Conditions
      • Company Profile
      • Milestones
    • 经销商
      • Asia
      • Europe
      • North America
    • Contact us
    • Map and Travel Information
    • Sponsoring
    • Events
    • Payment form
  • 产品
    • 印刷电路板的抗干扰性
      • 抗干扰开发系统
      • 用于开发过程的发生器
      • 配件(猝发 / 电快速瞬变脉冲发生器 IEC 61000-4-4)
      • 光信号传输
      • 猝发脉冲序列探测器
    • 印刷电路板的干扰发射
      • 用于开发过程的测试技术
      • 近场探头
      • 前置放大器
      • Near-Field Microprobes
      • 光信号传输
    • 集成电路测试技术
      • 集成电路的测试环境
      • 干扰发射
      • 集成电路的抗干扰性
    • IC Security
      • Fault Injection
      • Positioning systems
    • 扫描仪
      • Langer 扫描仪
      • Accessories for Langer Scanner
      • Near-field Scanner Probes
    • 软件
      • CS-Scanner, ChipScan-Scanner 软件
      • CS-ESA set, ESA芯片扫描软件
    • 测试及校准工作台
      • 印刷电路板
      • 集成电路
      • 连接器
    • 测试技术的学习和培训
      • EMC-Basic 1 set
      • EMC-Basic 2 set
      • DB 20 set
      • D10 set
  • 研讨班
    • SF-GE, SF-GE
    • SF-G, SF-Basics
    • SA-GE, SA-GE
    • SA-G, SA-Basics
    • SF IHS
    • SA IHS
    • Dates Overview
  • 服务
    • 电磁兼容性讲座
      • WS ESA1
      • WS IC
      • WS PCB
      • WS Scanner
      • 集成电路的电磁兼容性干扰发射分析
      • 集成电路的电磁兼容性抗干扰分析
      • SMM Langer
      • COCI
    • EMV-B, 咨询 / 电子干扰排除
  • 电磁兼容性知识
    • 专业文献:Board-EMC
      • 集成电路的电磁兼容性抗干扰分析
      • 集成电路的电磁兼容性干扰发射分析
    • 专业文献: IC-EMC
      • 集成电路的电磁兼容性抗干扰分析
      • 集成电路的电磁兼容性干扰发射分析
    • Langer EMV-Technik in scientific research
    • 资讯
      • 17 ESA1 set
      • 16 ICI-DP sets
      • 15 tent and GP 23 set
      • 14 Mini Burst Field Generators in pocket size
      • 13 Achieve interference immunity by identifying and eliminating EMC weak points:
      • 12 ICR: Near-field analysis in the micrometer range and its advantages
      • 11 ChipSan-ESA now supports more measuring devices
      • 10 P512 and DPI
      • 09Surface Scan on IC Level with high Resolution
      • 08 ESD and Efficient Electronic Design
      • 07 EMC Measurement Technology for Testing Integrated Circuits - An Introduction
      • 06 Measuring the Shielding Effectiveness at IC Level with the IC Test System P1402/P1502
      • 05 Time and cost savings when recording and documenting RF measurements with a spectrum analyzer
      • 04 Radiated Emissions at the PCB Level - An Introduction
      • 03 消除脉宽调制 (PWM) 直流电机的电磁骚扰
      • 使用朗格尔(Langer EMV-Technik GmbH)近场探头实现至6 GHz的测量
      • 01 EMC实用技巧和建议 如何使用近场探头抑制LVDS连接的干扰
    • 视频
      • 产品用途
      • 研讨会
  • 印刷电路板的抗干扰性
  • 印刷电路板的干扰发射
    • 用于开发过程的测试技术
    • 近场探头
      • 无源LF(100 kHz - 50 MHz)
      • 无源RF(30 MHz - 3 GHz)
      • 无源XF(30 MHz - 6 GHz)
      • 无源SX(1 GHz - 20 GHz)
      • HR, Passive, up to 40 GHz
      • 有源MFA(1 MHz - 6 GHz)
        • MFA 01 set微型探头组(1MHz-6GHz)
        • MFA 02 set微型探头组(100MHz-1GHz)
        • MFA-R 0.2-6微型近场探头(100MHz-6GHz)
        • MFA-R 0.2-75微型近场探头(1MHz-6GHz)
        • MFA-K 0.1-12微型近场探头(100MHz-6GHz)
        • MFA-K 0.1-30微型近场探头(1MHz-1GHz)
      • CM-SHP
      • Individual Characterization
    • 前置放大器
    • Near-Field Microprobes
    • 光信号传输
  • 集成电路测试技术
  • IC Security
  • 扫描仪
  • 软件
  • 测试及校准工作台
  • 测试技术的学习和培训
  • 产品
  • 印刷电路板的干扰发射
  • 近场探头
  • 有源MFA(1 MHz - 6 GHz)
  • MFA-K 0.1-12, 微型近场探头(100MHz-6GHz)

MFA-K 0.1-12

微型近场探头(100MHz-6GHz)

  • Short description
  • Technical parameters
Send enquiry Datasheet
  • MFA-K 0.1-12, 微型近场探头(100MHz-6GHz)
  • Probe head
    Probe head
  • Application
    Application
MFA-K 0.1-12, 微型近场探头(100MHz-6GHz) Probe head Application
  • MFA-K 0.1-12, 微型近场探头(100MHz-6GHz)
  • Probe head
  • Application
Short description

MFA-K 01-12探头的探测头非常小,其工作原理与电流钳相同,可用于测量精细导体或IC引脚上的电流,能够屏蔽从侧面作用到探头的场线。

The hand-guided, high resolution MFA-K 0.1-12 is an active near-field micro probe that requires the BT 706 bias tee to operate. The near-field micro probe is used to measure magnetic fields up to 6 GHz especially at signal conductors (150 µm) or IC pins. In principle it has the same structure as the MFA-K 0.1-30, differing only in its frequency response.
Due to the special probe head design, magnetic fields which impinge the probe head laterally, e.g. from adjoining conductors, are not detected.
The direction of the coil is marked on the probe head with a black dot.
An amplifier stage is integrated into the probe head. The amplifier stage (9 V, 100 mA) is powered via the bias tee. It has an impedance of 50 Ω. The near-field micro probe is connected to a spectrum analyzer or oscilloscope with a 50 Ω input via the BT 706 bias tee. A power supply unit and the bias tee are included in the scope of delivery.
With the help of the correction lines, the probe’s output voltage is converted into either the respective magnetic field or the current running through the conductor.
The near-field micro probe is small and handy. It has a current attenuating sheath and is electrically shielded.

Technical parameters
频率范围 100 MHz ... 6 GHz
分辨率 200 µm
输出接口 SMA, female, jack
频率特性 [dBµV] / [dBµA/m] 频率特性 [dBµV] / [dBµA/m] 频率特性 [dBµV] / [dBµA/m]
磁场校正曲线 [dBµA/m] / [dBµV] 磁场校正曲线 [dBµA/m] / [dBµV] 磁场校正曲线 [dBµA/m] / [dBµV]
电流校正曲线 [dBµA] / [dBµV] 电流校正曲线 [dBµA] / [dBµV] 电流校正曲线 [dBµA] / [dBµV]
  • © Langer EMV-Technik
  • Contact us
  • Legal notice
  • Privacy policy
  • Sponsoring
  • facebook
  • YouTube
  • Linked-In
  • Twitter
Europäischer Fonds für regionale Entwicklung EFRE - Europäischer Sozialfonds ESF