P500 probes for RF injection based on IEC EN 62132-4
Injection of high-frequency currents and voltages into IC pin
Up to now the RF of a certain power was coupled into the pins of an IC to characterize its disturbance immunity. The IC's malfunction then indicated any internal interference.
The RF disturbance from the power amplifier flows through the connected probe to the pin under examination. An RF current and voltage measurement is carried out in the probe tip at the same time. The parameters recorded allow more precise conclusions to be drawn with regard to an IC's EMC.
Functional faults that occur at large current values have magnetic causes; capacitive coupling will be the cause at large voltage values. The reactive currents measured with the new measuring procedures are not detected by a common power measurement. Thus, detailed physical findings remained in the dark. IC development benefits from this new measuring method of RF injection.
Technical data
RF injection probes: | Probe 501 | Probe 502 | Probe 503 |
|---|---|---|---|
Ammeter: | 2 MHz - 3 GHz | 2 MHz - 3 GHz | 200 kHz - 1.5 GHz |
Max. current: | 1 A | 1 A | 1 A |
Voltmeter: | 16 kHz - 3 GHz | 16 kHz - 3 GHz | 16 kHz - 3 GHz |
Max. voltage: | 50 Veff | 1 Veff | 50 Veff |
Transfer factor: | - 40 dB | 0 dB | - 40 dB |
| |||
Coupling capacitance: | 3 µF oder 6.8 nF* | 3 µF oder 6.8 nF* | 3 µF oder 6.8 nF* |
Max. power transmission: | 30 W | 30 W | 30 W |
Auxiliary power: | 12 V | 12 V | 12 V |
| |||
- Equivalent circuit (DPI - Norm Ck = 6.8 nF)
- Transfer factor Ammeter-P503 from 200 kHz to 2 MHz