IC ESD H-Field Probe 1201
- Probe 1201
Application:
The field source is used to generate an ESD magnetic field and measure the ICs immunity to ESD magnetic fields, in particular multi-pole ICs (chip sets).
The probe is positioned at a defined distance (3 or 10 mm) above the IC.
Property:
A pulse current is fed into a current loop within the probe to generate the ESD magnetic field. This produces a magnetic field pulse that leaves the probe via its bottom. The slope rate of 200 ps has a similar effect in the IC as ESD transients.
Technical Parameters:
Pulse current: | ± 20 ...160 A |
Pulse shape: | 0,2 / 2,5 ns |
Frequency: | 0 ... 10 Hz |
High voltage: | 0,2 ... 9,5 kV |
Control unit: | |
Internal shunt: | 0,1 Ohm |
Shunt adaption: | 50 Ohm, SMB |
Correction factor: | 26 dB |
Dimensions: | 78 mm x 160 mm |
Technical details (pdf-file, 174 kb)
IC ESD E-Field Probe 1301
- Probe 1301
Application:
The field source is used to generate an ESD electric field and measure the ICs immunity to ESD electric fields, in particular multi-pole ICs (chip sets). The probe is positioned at a defined distance (3 or 10 mm) above the IC.
Property:
A pulse voltage is fed into a field electrode within the probe to generate the ESD electric field. This produces a electric field pulse that leaves the probe via its bottom. The slope rate of 200 ps has a similar effect in the IC as ESD transients.
Technical Parameters:
Pulse voltage: | ± 0,2 ...9,5 kV |
Pulse shape: | 0,2 / 5,5 ns |
Frequency: | 0 ... 10 Hz |
High voltage: | 0,2 ... 9,5 kV |
Control unit: | |
Measurement output: | 50 Ohm, SMB |
Correction factor: | dB |
Dimensions: | 96 mm x 168 mm |
