P1202-2 based on IEC 61000-4-2 and P1202 / P1301 probes for ESD field injection
Application:
The field sources are used to generate an ESD field (magnetic/electric) and measure the ICs immunity to ESD fields, in particular multi-pole ICs (chip sets).
The probes are positioned at a defined distance (3 or 10 mm) above the IC.
Properties:
A pulse current is fed into a current loop within the probe to generate the ESD field (magnetic/electric). This produces a field pulse that leaves the probe via its bottom. The slope rate of 200 ps has a similar effect in the IC as ESD transients.
Technical parameters:
Probes | P1202-2 | P1202 | P1301 |
Pulse current/voltage: | ± 150 A | ± 150 A | ± 0.1 - 9.5 kV |
Pulse shape: | 0.7 / 60 ns | 0.2 / 2.5 ns | 0.2 / 5.5 ns |
Pulse frequency: | 0.1 - 10 Hz | ||
High voltage: | ± 0.1 - 9.5 kV | ||
Measurement output: | 50 Ohm, SMB | ||
Control unit: | |||
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Shunt for current measurement: | 0.1 Ohm | 0.1 Ohm | |
Current correction factor R: | -26 dB Ohm | -26 dB Ohm |
ESD H-field injection probe 1202-2 (IEC 61000-4-2):
ESD H-field injection probe P1202:
ESD E-field injection probe P1301:
