EMC Measurement on IC
H-field / E-field measurements on ICs
ICS 103 IC scanner
Measuring electro-magnetic disturbance emissions according to IEC 61967-3,
section 3: Measurement of radiated emissions, surface scan method (10kHz to 3GHz)
E - field resolution: 150 µm x 35 µm
H - field resolution: 70 µm
Measurement of near fields above dice
Measurement of magnetic and electric near fields at a high resolution.
The measurement results are shown in detail in 2D and 3D diagrams.
Measurement of near fields above IC pins
This measurement is used to indirectly measure the voltage and current of IC pins without making contact. The frequency-dependent pin voltage can be calculated via the probe characteristics on the basis of the values measured with the H- and E-field probes.
Total field measurement above the IC (P 1600 / 1700)
IC exciting fields from 16 kHz to 3 GHz are determined in a total field measurement. IC exciting fields can be a source of disturbances that are emitted by PCBs. IC exciting field measurements enable the IC user to recognize potential usage problems and avoid them through appropriate counter-measures.
- IC H exciting field measuring station (P 1600)
- Measuring electric near fields above the IC (P 1700)
This measurement develops the TEM cell measurement further. In contrast to the TEM cell measurement, the E-field and H-field are measured separately. Selective field recording is important for practical IC usage. E-fields require other EMC measures than H-fields.