EMC Measurement on IC

Further EMC measurements

The firm of Langer provides semi-automatic measuring stations for the further measurements on ICs that are listed. We concentrate on practical problems in these measurements and have comprehensive experience in the use of very complex ICs in terms of EMC technology.

Please do not hesitate to contact us. We will be pleased to offer our advice and make you an appropriate offer.

 

 

Measurement

Parameter

Probe

Station

Emission

1.

RF current measurement
on any IC pin

(measure of the potential generation of magnetic RF-fields on PCB)

0,1 or 1 Ohm Shunt
0,2 kHz ... 3 GHz

P600

P600

2.

RF voltage measurement
on any IC pin

(measure of the potential generation of electric RF-fields on PCB)

50, 150, 1500 Ohm voltage meter,
15 kHz ... 3 GHz

P700

P700

3.

IC exciting E-field

(measure of the excitation of disturbance emissions via IC E-fields, further development of the TEM-cell method)

... 3 GHz

P1700

P1700

4.

IC exciting H-field

(measure of the excitation of disturbance emissions via IC H-field, further development of the TEM-cell method)

... 3 GHz

P1600

P1600

5.

IC-Scanner
(Surface Scan Method)

H-field

E-field

  • Detection of the spatial field distribution above the die
  • Indirect current and voltage measurements on IC pins

 

...3 GHz

Resolution 70 µm

ICS 103

 

Probes

ICS 103

Immunity

6.

Pulse disturbances
(Burst, ESD)
Coupling into IC pins

Pulse voltage source

Pulse current source

IEC 61000-4-2
IEC 61000-4-4
 

1,5/20 ns,
100 Ohm

1,5/5 ns,
1 Ohm

P300

 

P200

P300

 

P200

7.

Pulse fields, E or H
(Burst, ESD) for radiated interference with ICS

under development

P1200

 

P1300

P1200

 

P1300

8.

Direct Power Injektion Method (DPI)

Additional RF current and voltage measurements, time characteristics, effective values and phase angles for cause studies in the IC

... 3 GHz

P500

P500

9.

Extended Direct Power Injektion Method (DPI) Special measurements for LIN modules
Cause studies in the IC

... 3 GHz

P500

P500

10.

Extended Direct Power Injection (DPI) for OPV-IC

1R Generator

1k Generator

... 3 GHz


P500

P500

11.

RF electric or magnetic disturbance fields for radiated interference with ICs (die)

(further development of the TEM-cell method)

under development

P1500

P1500